Investigations into local piezoelectric properties by atomic force microscopy
Investigations into local piezoelectric properties by atomic force microscopy
复制标题
用原子力显微镜研究局部压电特性
DOI：
10.1063/1.125756
复制
发表时间：
2000
影响因子：
4
通讯作者：
M. Welland
中科院分区：
文献类型：
--
作者：
C. Durkan;D. Chu;P. Migliorato;M. Welland
我们描述了溶胶-凝胶法制备的锆钛酸铅铁电薄膜的纳米级表征。我们已经进行了定量的局部测量表面极化电荷密度与电场计算结合使用原子力显微镜技术。我们发现，域的半径为40 nm，可以写入和随后的特点，我们分析了域的大小对写入电压和写入时间的依赖关系，并表明表面污染物影响域的形成。
We describe nanoscale characterization of sol-gel produced ferroelectric thin films of lead–zirconate–titanate. We have performed quantitative localized measurements of surface polarization charge density using atomic force microscopy techniques in conjunction with electric field calculations. We show that domains with radii of 40 nm may by written and subsequently characterized, and we analyze the dependence of domain size on write voltage and write time, and show that surface contaminants influence the formation of domains.