Complex domain structure in relaxed PbTiO3 thick films grown on (100)cSrRuO3//(100)SrTiO3 substrates
Complex domain structure in relaxed PbTiO3 thick films grown on (100)cSrRuO3//(100)SrTiO3 substrates
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DOI：
10.1063/1.4746078
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发表时间：
2012-09-01
影响因子：
3.2
通讯作者：
Gruverman, Alexei
中科院分区：
文献类型：
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作者：
Yasui, Shintaro;Ehara, Yoshitaka;Gruverman, Alexei
采用金属有机化学气相沉积技术在(100)(C)SrRuO_3//(100)SrTiO_3衬底上生长了PbTiO_3外延薄膜，用X射线衍射仪(XRD)和压电响应力显微镜(PFM)研究了薄膜的磁畴结构。结果表明，随着薄膜厚度的增加，磁畴结构由简单的(001)偏振取向转变为(001)和(100)的复杂混合取向。PFM图谱显示，在较厚的薄膜(类似于1100 nm)中，Z字形(001)/(100)域边界形成大约87度的角度，而不是在较薄的(001)/(100)域图案中通常观察到的90度。
Domain structures of epitaxial PbTiO3 films grown on (100)(c)SrRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition were investigated by x-ray diffraction (XRD) and piezoresponse force microscopy (PFM) techniques. It was found that with increasing film thickness, the domain structure changed from simple (001) polarization orientation to a complicated mixture of (001) and (100) orientations. PFM mappings showed that in the thicker films (similar to 1100 nm), the zigzag (001)/(100) domain boundaries made an angle of approximately 87 degrees instead of 90 degrees typically observed in (001)/(100) domain patterns in thinner (