Non-equilibrium ultrashort pulse generation strategies in VECSELs
Non-equilibrium ultrashort pulse generation strategies in VECSELs
复制标题
VECSEL 中的非平衡超短脉冲生成策略
DOI：
--
复制
发表时间：
2017
期刊：
影响因子：
--
通讯作者：
J. Moloney
中科院分区：
文献类型：
--
作者：
I. Kilen;S. Koch;J. Hader;J. Moloney
垂直外腔面发射激光器是研究非线性多体系统的理想实验平台。然而，当持续时间短于本征载流子散射时间的高峰强度光脉冲与传导带中的电子和价带中的空穴相互作用时，经典的激光增益图像失败，并且非平衡载流子分布在激发脉冲存在期间不能恢复。通过半导体布洛赫方程和麦克斯韦波动方程对半导体量子阱增益介质和吸收介质中电子-空穴激发的非平衡量子动力学进行建模，优化了带可饱和吸收镜的垂直外腔面发射激光器腔中超短锁模脉冲的输出。我们介绍了一个系统的设计，预测产生稳定的锁模脉冲的持续时间小于20飞秒。这五个因素的改善是锁模和超快半导体动力学应用的兴趣。
Vertical external cavity surface emitting lasers are ideal testbeds for studying nonlinear many-body systems driven far from equilibrium. The classical laser gain picture fails, however, when a high peak intensity optical pulse of duration shorter than the intrinsic carrier scattering time interacts with electrons in the conduction and holes in the valence band, and the non-equilibrium carrier distributions cannot recover during the presence of the exciting pulse. We present the optimization of ultrashort mode-locked pulses in a vertical external cavity surface emitting laser cavity with a saturable absorber mirror by modelling non-equilibrium quantum dynamics of the electron-hole excitations in the semiconductor quantum-well gain and absorber medium via the semiconductor Bloch equations and treating the field propagation at the level of Maxwell’s wave equation. We introduce a systematic design that predicts the generation of stable mode-locked pulses of duration less than twenty femtoseconds. This factor of five improvement is of interest for mode-locking and ultrafast semiconductor dynamics applications.
发射 60 飞秒脉冲的被动锁模外腔半导体激光器
影响因子：
35
作者：
Quarterman A
通讯作者：
Quarterman A