Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm
Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm
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通过金属有机化学气相沉积生长的 InGaAs/GaAs 量子点的结构研究，用于 1.3 μm 光电应用
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
M. Catalano
中科院分区：
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作者：
A. Passaseo;R. Rinaldi;M. Longo;S. Antonaci;A. Convertino;R. Cingolani;A. Taurino;M. Catalano
我们研究了不同生长条件对特定类别的 InGaAs/GaAs 量子点 (QD) 二维到三维生长模式转变的影响，该量子点针对 1.3 μm 左右的光学器件应用进行了优化（In 含量 x≈0.5）。这些点是通过低压金属有机化学气相沉积在砷化镓基底上生长的。我们证明，与优化的单量子点层结构（即润湿层厚度减小和均匀性高）相对应的临界层厚度可以通过动力学效应控制。优化的生长条件使我们能够生长六层堆叠 QD 结构作为活性材料，用于制造在室温下工作在 1.3 μm 左右的发光器件。
We have studied the influence of difference growth conditions on the two-dimensional to three-dimensional growth mode transition for a specific class of InGaAs/GaAs quantum dots (QDs) optimized for applications to optical devices operating around 1.3 μm (In content x≈0.5). The dots are grown by low-pressure metalorganic chemical vapor deposition on GaAs substrates. We demonstrate that the critical layer thickness corresponding to optimized single-QD layer structures (i.e., with reduced wetting layer thickness and high uniformity) can be controlled by kinetic effects. The optimized growth conditions allow us to grow six-layers stacked QD structures as active material for the fabrication of a light emitting devices operating around 1.3 μm at room temperature.