New linear-parabolic rate equation for thermal oxidation of silicon.
New linear-parabolic rate equation for thermal oxidation of silicon.
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DOI：
10.1103/physrevlett.96.196102
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发表时间：
2006-05
影响因子：
8.6
通讯作者：
Takanobu Watanabe;K. Tatsumura;I. Ohdomari
中科院分区：
文献类型：
--
作者：
Takanobu Watanabe;K. Tatsumura;I. Ohdomari
本文提出了一个新的硅氧化速率方程，该方程只考虑氧化物种的扩散，而不考虑界面反应的速率限制步骤。在SiO（2）/Si界面附近的应变氧化物区，扩散率被抑制。新方程中抛物常数的表达式与Deal-Grove模型相同，而线性常数的表达式与Deal-Grove模型有明显区别。使用新的表达式估计的厚度接近1 nm，这与结构过渡层的厚度相比很好。
We propose a new oxidation rate equation for silicon supposing only a diffusion of oxidizing species but not including any rate-limiting step by interfacial reaction. It is supposed that diffusivity is suppressed in a strained oxide region near SiO(2)/Si the interface. The expression of a parabolic constant in the new equation is the same as that of the Deal-Grove model, while a linear constant makes a clear distinction with that of the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layers.