Photoluminescence properties of thin nitrogen- and phosphorus-doped ZnO films fabricated using pulsed laser deposition
Photoluminescence properties of thin nitrogen- and phosphorus-doped ZnO films fabricated using pulsed laser deposition
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脉冲激光沉积制备的氮磷掺杂 ZnO 薄膜的光致发光特性
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
J. Bartha
中科院分区：
文献类型：
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作者：
L. Parshina;O. Novodvorsky;V. Panchenko;O. Khramova;Ye. A. Cherebilo;A. Lotin;C. Wenzel;N. Trumpaicka;J. Bartha
制备n型和p型高质量薄膜结构是解决基于氧化锌的发光p-n结生长问题的一个前景任务。采用脉冲激光沉积法制备了ZnO:N和ZnO:P薄膜样品。将Zn3N2、MgO和Zn3P2引入ZnO陶瓷靶中制备p型ZnO薄膜。气体O2和N2O用作缓冲气体。采用热退火法制备ZnO薄膜。在退火前后测量了ZnO薄膜的电阻和光致发光光谱。建立了退火前后ZnO PL峰振幅和位置与氮磷掺杂水平的关系。利用波长为325 nm的He-Cd激光器，研究了连续波光激发下薄膜的PL特性。用HR4000海洋光学光谱仪在10 ~ 400 K的温度范围内记录了300 ~ 700 nm范围内的PL光谱。分析了薄膜沉积条件对发光光谱的影响。研究了ZnO薄膜中N-和p -掺杂水平对薄膜发光强度和紫外区发光带位置的影响。测量了ZnO:P薄膜的短波（250 ~ 400 nm）透射光谱。研究了p掺杂水平对ZnO薄膜带隙的影响。
The production of n- and p-type high-quality film structures is a foreground task in tackling the problem of growing the light-emitting p-n junctions based on zinc oxide. The ZnO:N and ZnO:P thin-film samples are produced from ceramic targets using the pulsed laser deposition. Zn3N2, MgO, and Zn3P2 are introduced in the ZnO ceramic targets for the fabrication of the p-type ZnO films. Gases O2 and N2O are used as buffer gases. The thermal annealing of the ZnO films is employed. The resistance and photoluminescence (PL) spectra of the ZnO films are measured prior to and after annealing. The dependence of the ZnO PL peak amplitude and position prior to and after annealing on the level of doping with nitrogen and phosphorus is established. The PL characteristics of the films are studied at cw optical excitation using a He-Cd laser with a radiation wavelength of 325 nm. The PL spectra in the interval 300–700 nm are recorded by an HR4000 Ocean Optics spectrometer in the temperature range 10–400 K. The effect of the conditions for the film deposition on the PL spectra is analyzed. The effect of the N- and P-doping level of the ZnO films on the PL intensity of the films and the position of the PL bands in the UV region is investigated. The short-wavelength (250–400 nm) transmission spectra of the ZnO:P films are measured. The effect of the P-doping level on the band gap of the ZnO films is studied.