Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers
Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers
复制标题
电注入 GaN 基垂直腔表面发射激光器的室温连续波激射
DOI：
10.1063/1.4885384
复制
发表时间：
2014-06-23
影响因子：
4
通讯作者：
Zhang, Bao-Ping
中科院分区：
文献类型：
--
作者：
Liu, Wen-Jie;Hu, Xiao-Long;Zhang, Bao-Ping
在室温下实现了电注入GaN基垂直腔面发射激光器（VCSEL）的连续激光输出。首先，通过两步衬底转移技术获得了具有0.12nm的非常窄的线宽的高品质因数（Q）VCSEL结构的器件，对应于3570的Q值。然而，散热能力差阻止了器件发射激光。在高Q值谐振腔设计的基础上，我们进一步在硅衬底上采用金属键合技术制作了垂直结构的垂直腔面发射激光器。在垂直结构垂直腔面发射激光器中观察到连续激光，阈值电流密度为1.2kA/cm ~ 2，激光线宽约为0.20nm。
Continuous wave (CW) lasing of electrically injected GaN-based vertical cavity surface emitting lasers (VCSELs) was achieved at room temperature. First, a high quality factor (Q) VCSEL-structured device with very narrow linewidth of 0.12 nm, corresponding to a Q-value of 3570 was obtained through two-step substrate transfer technique. However, poor heat dissipation ability prevented the device from lasing. Based on the high-Q resonant cavity design, we further fabricated vertical-structured VCSELs through metal bonding technique on Si substrate. CW lasing from vertical-structured VCSELs was observed with threshold current of density of 1.2 kA/cm2 and lasing linewidth of about 0.20 nm.