RECESSED-CHANNEL STRUCTURE FOR FABRICATING ULTRATHIN SOI MOSFET WITH LOW SERIES RESISTANCE
RECESSED-CHANNEL STRUCTURE FOR FABRICATING ULTRATHIN SOI MOSFET WITH LOW SERIES RESISTANCE
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DOI：
10.1109/55.289474
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发表时间：
1994-01-01
影响因子：
4.9
通讯作者：
KO, PK
中科院分区：
文献类型：
--
作者：
CHAN, MS;ASSADERAGHI, F;KO, PK
一种新的凹槽沟道 SOI (RCSOI) 技术已开发出来，用于制造具有低源极/漏极串联电阻的超薄 SOI MOSFET。采用RCSOI技术制造了沟道膜厚为72 nm的薄膜全耗尽SOI MOSFET。与传统工艺相比，新结构的源极/漏极串联电阻降低了 70%。在深亚微米区域，使用RCSOI技术，饱和漏极电流和跨导比传统器件提高了80%以上。新技术还将促进硅化物的使用，以进一步降低串联电阻。
A new recessed-channel SOI (RCSOI) technology has been developed for fabricating ultrathin SOI MOSFET's with low source/drain series resistance. Thin-film fully depleted SOI MOSFET's with channel film thickness of 72 nm have been fabricated with the RCSOI technology. The new structure demonstrated a 70% reduction in source/drain series resistance compared with conventional processes. In the deep-submicron region, more than 80% improvement in saturation drain current and transconductance over conventional devices was achieved using the RCSOI technology. The new technology would also facilitate the use of silicide for further reducing the series resistance.