Low-energy Ion-scattering Spectroscopic Analysis of Structural Damage in Si Substrate under Ultrathin SiO2 after Gate Etching
Low-energy Ion-scattering Spectroscopic Analysis of Structural Damage in Si Substrate under Ultrathin SiO2 after Gate Etching
复制标题
超薄SiO2下硅衬底栅刻蚀后结构损伤的低能离子散射光谱分析
DOI：
10.1143/jjap.38.2124
复制
发表时间：
1999
影响因子：
1.5
通讯作者：
T. Umezawa
中科院分区：
文献类型：
--
作者：
M. Matsui;F. Uchida;TakafumiTokunaga Enomoto;T. Umezawa
通过低能离子散射光谱 (LEIS) 和高分辨率 X 射线光电子能谱研究了过度蚀刻过程中的晶圆偏置功率与超薄 SiO2 层下的 Si(100) 衬底因栅极蚀刻而引起的结构损伤之间的关系。在过蚀刻过程中，当晶圆偏压 RF 功率为 70 W 时，当残留 SiO2 层达到 2.5 nm 厚时，Si 衬底最上表面的晶体结构发生了改变。这种结构损坏被证明是由于等离子体辐射产生的离子造成的，因为残余 SiO2 厚度接近离子能量为 310 eV 时的预计离子范围（根据 RF 功率为 70 W 时的偏压 Vpp 估算）。
The relationship between wafer-bias power during over-etching and structural damage induced in Si(100) substrate under ultrathin SiO2 layers by gate etching was examined by low-energy ion-scattering spectroscopy (LEIS) and high-resolution X-ray photoelectron spectroscopy. The crystal structure of the topmost surface of the Si substrate was modified when the residual SiO2 layer was 2.5 nm thick at a wafer-bias RF power of 70 W during over-etching. This structural damage was shown to be due to ions coming from plasma irradiation because the residual SiO2 thickness was close to the projected ion range at an ion energy of 310 eV (which was estimated from the Vpp of the bias voltage when the RF power was 70 W).