Carrier density tuning in CuS nanoparticles and thin films by Zn doping via ion exchange.

Carrier density tuning in CuS nanoparticles and thin films by Zn doping via ion exchange.
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通过离子交换掺杂锌来调节 CuS 纳米粒子和薄膜中的载流子密度。

DOI:
10.1039/d3nr00139c
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发表时间:
2023
期刊:
影响因子:
6.7
通讯作者:
Shukla A
Shukla A
中科院分区:
材料科学2区
文献类型:
--
作者:
Shukla A

文献摘要

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硫化铜(蓝铜)纳米片最近作为近红外等离子体平台出现,具有超快非线性光学特性。在这里,我们证明了 CuS 中的自由载流子密度比传统等离子体金属低一个数量级,可以通过化学掺杂进一步调节。使用离子交换以增加纳米粒子中的Zn含量来代替Cu,可以降低自由空穴密度,导致局域等离子体共振的长波长从1250 nm移动到1750 nm。所提出的方法为调整蓝蓝纳米晶体的等离子体响应以及随着自由载流子密度降低而减少的载流子弛豫时间提供了新的机会。
Copper sulphide (covellite) nanoplatelets have recently emerged as a plasmonic platform in the near-infrared with ultrafast nonlinear optical properties. Here we demonstrate that the free-carrier density in CuS, which is an order of magnitude lower than in traditional plasmonic metals, can be further tuned by chemical doping. Using ion exchange to replace Cu with an increasing content of Zn in the nanoparticles, the free-hole density can be lowered, resulting in a long-wavelength shift of the localised plasmon resonances from 1250 nm to 1750 nm. The proposed approach provides new opportunities for tuning the plasmonic response of covellite nanocrystals as well as the carrier relaxation time which decreases for lower free-carrier densities.