Low-Temperature Hybrid Dopant Activation Technique Using Pulsed Green Laser for Heavily-Doped n-Type SiGe Source/Drain
Low-Temperature Hybrid Dopant Activation Technique Using Pulsed Green Laser for Heavily-Doped n-Type SiGe Source/Drain
复制标题
使用脉冲绿光激光重掺杂 n 型 SiGe 源极/漏极的低温混合掺杂剂激活技术
DOI：
10.1109/led.2018.2875751
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发表时间：
2018
影响因子：
4.9
通讯作者：
Hyun‐Yong Yu
中科院分区：
文献类型：
--
作者：
Seung‐Geun Kim;Gwang;Seung;Hyun‐Yong Yu
本文提出了一种新的n型硅锗（SiGe）杂化掺杂激活技术，利用快速热退火和脉冲绿色激光后退火（hybrid RTA-GLA）在低温（≤500℃）下实现高掺杂浓度和超浅结。混合RTA-GLA工艺获得的表面和峰值掺杂浓度分别为<inline-formula> < text -math符号="LaTeX">$1.82\乘以10^{\textsf {20}}$ </ text -math></inline-formula> cm<sup>−3</sup>和<inline-formula> < text -math符号="LaTeX">$9.27\乘以10^{\textsf {20}}$ </ text -math></inline-formula> cm<sup>−3</sup>。此外，通过混合RTA-GLA工艺掺杂的n型SiGe薄膜具有超浅（<60 nm）和突变（5 nm/ 10）结。这种先进的低温混合掺杂活化技术是一种很有前途的开发硅基电子产品的方法。
We present a novel hybrid dopant activation technique for n-type silicon–germanium (SiGe) to achieve high doping concentration and ultra-shallow junction at low temperature (≤500 °C) using rapid thermal annealing and pulsed green laser post-annealing (hybrid RTA-GLA). The hybrid RTA-GLA process achieved one of the highest surface and peak doping concentrations of <inline-formula> <tex-math notation="LaTeX">$1.82\times 10^{\textsf {20}}$ </tex-math></inline-formula> cm<sup>−3</sup> and <inline-formula> <tex-math notation="LaTeX">$9.27\times 10^{\textsf {20}}$ </tex-math></inline-formula> cm<sup>−3</sup>, respectively, compared with low-temperature doping techniques for n-type SiGe. In addition, the n-type SiGe films doped by the hybrid RTA-GLA process provide ultra-shallow (<60 nm) and abrupt (5 nm/decade) junctions. This advanced low-temperature hybrid dopant activation technique is a promising method for developing SiGe-based electronics.