Spin transport in germanium at room temperature
Spin transport in germanium at room temperature
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DOI：
10.1063/1.3505337
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发表时间：
2010-10-18
影响因子：
4
通讯作者：
Barnes, C. H. W.
中科院分区：
文献类型：
--
作者：
Shen, C.;Trypiniotis, T.;Barnes, C. H. W.
研究了Ni/Ge/AlGaAs电沉积Ni接触结中的自旋相关输运。自旋极化的电子被激发的光学自旋取向，并随后用于测量自旋相关的电导在Ni/Ge肖特基接口。我们证明了在室温下从Ge层的电子自旋输运和电提取。(C)2010年美国物理学会。[doi 10.1063/1.3505337]
Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni contact. Spin-polarized electrons are excited by optical spin orientation and are subsequently used to measure the spin dependent conductance at the Ni/Ge Schottky interface. We demonstrate electron spin transport and electrical extraction from the Ge layer at room temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3505337]