Metal-Oxide RRAM
Metal-Oxide RRAM
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DOI：
10.1109/jproc.2012.2190369
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发表时间：
2012-06-01
影响因子：
20.6
通讯作者：
Tsai, Ming-Jinn
中科院分区：
文献类型：
--
作者：
Wong, H. -S. Philip;Lee, Heng-Yuan;Tsai, Ming-Jinn
本文综述了二进制金属氧化物阻变随机存储器（RRAM）的最新进展。讨论了各种二元金属氧化物RRAM的物理机制、材料特性和电学特性，重点讨论了RRAM在非易失性存储器中的应用。本文综述了大规模RRAM阵列的最新发展。如均匀性，耐久性，保留，多位操作和缩放趋势的问题进行了讨论。
In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.