Nanogaps by direct lithography for high-resolution imaging and electronic characterization of nanostructures
Nanogaps by direct lithography for high-resolution imaging and electronic characterization of nanostructures
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DOI：
10.1063/1.2172292
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发表时间：
2006-02-06
影响因子：
4
通讯作者：
Drndic, M
中科院分区：
文献类型：
--
作者：
Fischbein, MD;Drndic, M
我们报告了一种直接用电子束光刻（EBL）制造纳米间隙的方法。通过使用薄膜作为基底，EBL（电子背散射）的主要分辨率极限显着降低。我们表明，这种分辨率增强使得人们能够制造间距从任意大到一纳米以下的金属电极。此外，由于这些纳米间隙位于薄膜上，因此可以使用高分辨率透射电子显微镜（HRTEM）对它们进行成像。使用这些纳米间隙，我们测量了通过几个耦合的 PbSe 纳米晶体的电荷传输，并将数据与通过在同一设备上执行 HRTEM 获得的详细结构信息相关联。
We report a method for fabricating nanogaps directly with electron beam lithography (EBL). The primary resolution-limit of EBL, electron back-scattering, is reduced dramatically by using a thin-film as a substrate. We show that this resolution enhancement allows one to fabricate metal electrodes with separation from arbitrarily large to under one nanometer. Furthermore, because these nanogaps are on a thin film, they can be imaged with high-resolution transmission electron microscopy (HRTEM). Using these nanogaps we measured the charge transport through several coupled PbSe nanocrystals and correlated the data with detailed structural information obtained by performing HRTEM on the same device.