Vacancy–oxygen complex in Si1−xGex crystals
Vacancy–oxygen complex in Si1−xGex crystals
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DOI：
10.1063/1.1569422
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发表时间：
2003-04
影响因子：
4
通讯作者：
V. Markevich;A. Peaker;L. Murin;N. Abrosimov
中科院分区：
文献类型：
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作者：
V. Markevich;A. Peaker;L. Murin;N. Abrosimov
利用电容瞬态技术研究了直拉法生长的无应变Si 1 −xGex（0<x <$0.055）晶体中空位-氧复合物的电子性质。发现缺陷单受主能级相对于导带边的电子电离焓ΔHn随着Ge含量的增加从0.16 eV增加到0.19 eV。Si 1 −xGex合金中晶格参数的变化被认为是观测到ΔHn变化的主要原因之一。
Electronic properties of the vacancy–oxygen complex in unstrained Si1−xGex crystals (0<x⩽0.055) grown by the Czochralski method were studied by means of capacitance transient techniques. The enthalpy of electron ionization for the single acceptor level of the defect relative to the conduction band edge, ΔHn, was found to increase from 0.16 to 0.19 eV with the increase in Ge content. The change of the lattice parameter in Si1−xGex alloys is argued to be one of the main reasons of the observed ΔHn change.