Atomic Mechanism of Strain Alleviation and Dislocation Reduction in Highly Mismatched Remote Heteroepitaxy Using a Graphene Interlayer.
Atomic Mechanism of Strain Alleviation and Dislocation Reduction in Highly Mismatched Remote Heteroepitaxy Using a Graphene Interlayer.
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DOI：
10.1021/acs.nanolett.2c00632
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发表时间：
2022-04
期刊：
影响因子：
10.8
通讯作者：
Bingyao Liu;Qi Chen;Zhaolong Chen;Shenyuan Yang;Jingyuan Shan;Zhetong Liu;Yue Yin;F. Ren;Shuo Zhang;Rong Wang;Mei Wu;Rui Hou;T. Wei;Junxi Wang;Jingyu Sun;Jinmin Li;Zhongfan Liu;Zhiqiang Liu;Peng Gao
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文献类型：
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作者：
Bingyao Liu;Qi Chen;Zhaolong Chen;Shenyuan Yang;Jingyuan Shan;Zhetong Liu;Yue Yin;F. Ren;Shuo Zhang;Rong Wang;Mei Wu;Rui Hou;T. Wei;Junxi Wang;Jingyu Sun;Jinmin Li;Zhongfan Liu;Zhiqiang Liu;Peng Gao
已知远程异质外延产生具有更好质量的半导体膜。然而，大失配系统中的原子机制仍然不清楚。本文中，通过石墨烯辅助的远程异质外延在高度失配（约16.3%）的蓝宝石上实现了低应变单晶氮化物膜。由于较弱的界面势，界面处的面内压应变释放了30%，位错被阻止。同时，当结构爬上衬底上的原子台阶时，外延层中的晶格畸变消失，因为石墨烯使台阶光滑。这样，生长的氮化物薄膜中的刃位错的密度降低到与螺旋位错的密度相同的水平，这在异质外延中很少观察到。此外，InxGa 1-xN/GaN多量子威尔斯阱中的铟组分增加到约32%，使得能够制造黄色发光二极管。这项研究证明了远程异质外延带隙调谐的优势，并为光电子和电子应用开辟了机会。
Remote heteroepitaxy is known to yield semiconductor films with better quality. However, the atomic mechanisms in systems with large mismatches are still unclear. Herein, low-strain single-crystalline nitride films are achieved on highly mismatched (∼16.3%) sapphire via graphene-assisted remote heteroepitaxy. Because of a weaker interface potential, the in-plane compressive strain at the interface releases by 30%, and dislocations are prevented. Meanwhile, the lattice distortions in the epilayer disappear when the structure climbs over the atomic steps on substrates because graphene renders the steps smooth. In this way, the density of edge dislocations in as-grown nitride films reduces to the same level as that of the screw dislocations, which is rarely observed in heteroepitaxy. Further, the indium composition in InxGa1-xN/GaN multiquantum wells increases to ∼32%, enabling the fabrication of a yellow light-emitting diode. This study demonstrates the advantages of remote heteroepitaxy for bandgap tuning and opens opportunities for photoelectronic and electronic applications.