An atomistic introduction to anisotropic etching
An atomistic introduction to anisotropic etching
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DOI：
10.1088/0960-1317/17/4/s01
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发表时间：
2007-04-01
影响因子：
2.3
通讯作者：
Tanaka, H.
中科院分区：
文献类型：
--
作者：
Gosalvez, M. A.;Sato, K.;Tanaka, H.
本文提出了一个简化的晶体硅（111）、（110）和（100）三个主要晶向的各向异性腐蚀模型，包括它们的邻面。该模型结合了微掩蔽和扩散现象的坑形核和台阶流，以解释主要的形态特征及其随浓度的变化。它还定性地解释了蚀刻速率的取向和浓度依赖性。我们的结论是，（100）上的浅圆形凹坑和（110）上的细长锯齿形结构，它们中的每一个构成了相应表面的基本形态，实际上是相同的物理现象的结果，扩散，被不同的潜在对称性所掩盖。它也表明，在不同浓度的两个表面上的小丘的形成是一个相关的过程。我们还描述和支持的想法，三角形坑（111）上的旋转是由于蚀刻剂阳离子的选择性阻挡机制，并解释如何形成多边形的步骤和/或步骤束上的斜切（111）表面可以发生作为扩散现象的结果，而不仅仅是由于微掩模。最后，铜作为一种微掩蔽剂的特殊功能进行了解释。
This review-oriented paper presents a simplified model of anisotropic etching of crystalline silicon for the three principal orientations (111), (110) and (100), including their vicinal surfaces. The model combines pit nucleation and step flow with micromasking and diffusion phenomena in order to explain the major morphologic features and their changes with concentration. It also qualitatively explains the orientation and concentration dependence of the etch rate. We conclude that the shallow round pits on (100) and the elongated zigzag structures on (110), each of which constitutes the basic morphology of the corresponding surface, are actually the result of the same physical phenomenon, diffusion, disguised by a different underlying symmetry. It is also shown that the formation of hillocks on the two surfaces at different concentrations is a related process. We also describe and support the idea that the rotation of the triangular pits on (111) is due to a selective blocking mechanism by the etchant cations and explain how the formation of polygonal steps and/or step bunches on miscut (111) surfaces can occur as a result of diffusion phenomena and not only due to micromasking. Finally, the particular features of Cu as a micromasking agent are explained.