Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi-Dirac statistics
Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi-Dirac statistics
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使用自洽费米-狄拉克统计对掺杂 GaAs 中的迁移率进行蒙特卡罗模拟
DOI：
10.1088/0268-1242/27/3/039501
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发表时间：
2012
影响因子：
1.9
通讯作者：
Islam A
中科院分区：
文献类型：
--
作者：
Islam A
用系综蒙特卡罗模拟方法计算了GaAs体材料中电子迁移率随离子化杂质浓度的变化。模拟包括费米-狄拉克统计与自洽计算的费米能量，电子温度，然后在静态和随机相位近似（q依赖）屏蔽模型和泡利不相容原理后，每个散射事件。然而，当在模拟中考虑由于泡利不相容原理而引起的简并时，则电子迁移率在高掺杂浓度下开始增加，表明模型的崩溃。这种击穿可以通过考虑半导体能带结构中的变化来防止，该变化经由在其晶格中起作用的掺杂剂。能带结构的变化已被纳入通过增加电子的有效质量，使我们能够获得很好的协议模拟电子迁移率与实验数据。
Electron mobility as a function of ionized impurity concentration is calculated in bulk GaAs using ensemble Monte Carlo simulations. The simulations include Fermi–Dirac statistics with self-consistently calculated Fermi energy, and electron temperature which are then used in static and in random phase approximation (q-dependent) screening model and for the Pauli exclusion principle employed after each scattering event. However, when the degeneracy due to the Pauli exclusion principle is considered in the simulations, then electron mobility starts to increase at high doping concentrations demonstrating a breakdown of the model. This breakdown can be prevented by taking into account a change in the semiconductor bandstructure via dopants acting in its lattice. The bandstructure change has been incorporated by increasing electron effective mass which allows us to obtain very good agreement of simulated electron mobility with experimental data.
掺杂剂种类对重掺杂半导体中电子迁移率的影响
DOI：
--
发表时间：
1997
期刊：
影响因子：
--
作者：
G. Kaiblinger;H. Kosina;C. Köpf;S. Selberherr
通讯作者：
S. Selberherr