Resonant Raman scattering measurements of strains in ZnS epilayers grown on GaP
Resonant Raman scattering measurements of strains in ZnS epilayers grown on GaP
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DOI：
10.1063/1.1477282
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发表时间：
2002-05
影响因子：
3.2
通讯作者：
Y. Yu;M. Hyun;Sungun Nam;Donghan Lee;O. Byungsung;Kwang-Cheol Lee;P. Yu;Y. Choi
中科院分区：
文献类型：
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作者：
Y. Yu;M. Hyun;Sungun Nam;Donghan Lee;O. Byungsung;Kwang-Cheol Lee;P. Yu;Y. Choi
用共振拉曼散射法研究了生长在（100）GaP上的ZnS薄膜的应变弛豫。随着ZnS薄膜厚度的增加，单LO声子的拉曼位移和强度增加，但最大半宽减小。这是由于双轴拉伸应变的松弛与产生错配位错。最后，发现ZnS/GaP薄膜的临界厚度约为35 nm。
The relaxation of strain in the ZnS epilayers grown on (100) GaP was investigated with resonant Raman scattering measurement. The single LO phonon resonant Raman shift and the intensity increased but the full width at half maximum decreased with the increasing ZnS epilayer thickness. These were attributed to the relaxation of the biaxial tensile strain with the generating misfit dislocations. Finally, the critical thickness of ZnS/GaP epilayer was found to be around 35 nm.