Preparation of highly conductive Mn-doped Fe3O4 thin films with spin polarization at room temperature using a pulsed-laser deposition technique -: art. no. 222504
Preparation of highly conductive Mn-doped Fe3O4 thin films with spin polarization at room temperature using a pulsed-laser deposition technique -: art. no. 222504
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DOI：
10.1063/1.1942640
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发表时间：
2005-05-30
影响因子：
4
通讯作者：
Kawai, T
中科院分区：
文献类型：
--
作者：
Ishikawa, M;Tanaka, H;Kawai, T
我们报告的MnxFe 3-xO 4（x=0，0.1，或0.5）外延薄膜的制备使用脉冲激光沉积技术。改性膜的形成条件进行了讨论，除了它们的电和磁性能的关系，室温自旋电子器件的潜在发展。x=0.1的薄膜可以在比没有Mn掺杂的Fe 3 O 4薄膜更高的衬底温度（600 ℃）下制备。掺杂后的薄膜在室温下电阻率较低，约为7.0 × 10 ~（-3）（x=0.1）~ 9.0 × 10 ~（-2）（x=0.5）Ω·cm。此外，自旋极化的MnxFe 3-xO 4（x=0，0.1，或0.5）薄膜的载体被证实在室温下通过检查异常的霍尔系数测量。(c)2005年美国物理学会。
We report on the preparation of MnxFe3-xO4 (x=0, 0.1, or 0.5) epitaxial thin films using a pulsed-laser deposition technique. Conditions for modified film formation are discussed, in addition to their electrical and magnetic properties in relation to the potential development of room temperature spin electronics devices. The film with x=0.1 could be fabricated at a higher substrate temperature (600 degrees C) than the Fe3O4 thin film without Mn doping. The doped films exhibited low resistivity of about 7.0x10(-3)(x=0.1)-9.0x10(-2)(x=0.5) Omega cm at room temperature. Moreover, a spin polarization of the carrier of MnxFe3-xO4 (x=0, 0.1, or 0.5) films was confirmed at room temperature by examination of anomalous Hall coefficient measurements. (c) 2005 American Institute of Physics.