Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates
Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates
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DOI：
10.1063/1.1565513
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发表时间：
2003-04
影响因子：
3.2
通讯作者：
Ho Nyung Lee;D. Hesse;N. Zakharov;Sung Kyun Lee;U. Gösele
中科院分区：
文献类型：
--
作者：
Ho Nyung Lee;D. Hesse;N. Zakharov;Sung Kyun Lee;U. Gösele
用脉冲激光沉积的方法在Y3稳定的氧化锆缓冲的Si(100)衬底上生长了均匀a轴取向的外延孪生La取代的Bi4Ti3O12(BLT)薄膜，薄膜的主要自发极化完全沿薄膜法线方向。使用特定厚度的SrRuO_3底电极，结合较高的生长速率和较高的氧压，与BLT(118)取向竞争的BLT(100)取向的体积分数可提高到99%。通过这种方法，实现了完全a轴取向的BLT薄膜的生长，获得了32μC/cm~2的剩余极化。初步的疲劳实验表明，在109次切换循环后，几乎没有任何疲劳。
Uniformly a-axis-oriented, epitaxially twinned La-substituted Bi4Ti3O12 (BLT) thin films having the major spontaneous polarization entirely along the film normal were grown by pulsed laser deposition on yttria-stabilized zirconia-buffered Si(100) substrates covered with very thin SrRuO3 bottom electrodes. Using SrRuO3 bottom electrodes of a specific low thickness in combination with a relatively high growth rate and a high oxygen pressure, the volume fraction of the BLT (100) orientation, which is competing with the BLT (118) orientation, was increased up to 99%. In this way the growth of fully a-axis-oriented BLT films was achieved, attaining a remanent polarization of 32 μC/cm2. Initial fatigue experiments indicated hardly any fatigue after 109 switching cycles.