Piezoelectric effect in RF sputtered ferroelectric thin films
Piezoelectric effect in RF sputtered ferroelectric thin films
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DOI：
10.1016/s0955-2219(01)00076-0
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发表时间：
2001-01-01
影响因子：
5.7
通讯作者：
Dudkievich, VP
中科院分区：
文献类型：
--
作者：
Czekaj, D;Surowiak, Z;Dudkievich, VP
在不同衬底上生长了BaTiO_3、LiNbO_3和Pb（Zr_（0.53）Ti_（0.45）W_（0.01）Cd_（0.01））O_3铁电薄膜。通过RF溅射制备薄膜的工艺条件进行了优化，以确保目标和薄膜之间的组合物转移。用X射线衍射分析了薄膜的结构。研究了氧化物薄膜的基本介电和压电性能，揭示了氧化物薄膜的工艺-结构-性能关系。测定了压电充电系数d（33）。自激极化。的薄膜，以及归因于90度畴壁的可逆位移的应力诱导极化被考虑到解释实验结果。(C)2001爱思唯尔科技有限公司版权所有。
Thin ferroelectric films of BaTiO3, LiNbO3, and Pb(Zr0.53Ti0.45W0.01Cd0.01)O-3 have been grown on different substrates. Processing conditions for the thin film preparation by RF sputtering were optimised to assure the composition transfer between the target and the thin film. Structure of the films was investigated by X-ray diffraction. The basic dielectric and piezoelectric properties were studied and the processing-structure perfection-property relationships of oxide thin films have been revealed. The piezoelectric charge coefficient d(33) was determined. Self-induced polarisation. of the thin films as well as stress-induced polarisation ascribed to reversible displacement of 90 degrees domain walls was taken into account to explain experimental results. (C) 2001 Elsevier Science Ltd. All rights reserved.