Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium
Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium
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DOI：
10.1126/science.1252268
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发表时间：
2014-04-18
期刊：
影响因子：
56.9
通讯作者：
Whang, Dongmok
中科院分区：
文献类型：
--
作者：
Lee, Jae-Hyun;Lee, Eun Kyung;Whang, Dongmok
单晶石墨烯在晶圆尺度上的均匀生长仍然是基于石墨烯的各种电子、光子、机械和其他器件的商业制造水平的挑战。在这里，我们描述了使用端氢锗缓冲层在硅片上生长无褶皱单晶单层石墨烯的晶圆尺度。锗（110）表面的各向异性双重对称性允许多个种子单向排列，这些种子被合并成具有预定取向的均匀单晶石墨烯。此外，石墨烯和其下的端氢锗表面之间的弱相互作用使得石墨烯易于无蚀刻的干燥转移和锗衬底的循环利用，从而实现石墨烯的持续生长。
The uniform growth of single-crystal graphene over wafer-scale areas remains a challenge in the commercial-level manufacturability of various electronic, photonic, mechanical, and other devices based on graphene. Here, we describe wafer-scale growth of wrinkle-free single-crystal monolayer graphene on silicon wafer using a hydrogen-terminated germanium buffer layer. The anisotropic twofold symmetry of the germanium (110) surface allowed unidirectional alignment of multiple seeds, which were merged to uniform single-crystal graphene with predefined orientation. Furthermore, the weak interaction between graphene and underlying hydrogen-terminated germanium surface enabled the facile etch-free dry transfer of graphene and the recycling of the germanium substrate for continual graphene growth.