Gas-phase doping of silicon with sulfur
Gas-phase doping of silicon with sulfur
复制标题
硅气相掺杂硫
DOI：
10.1088/0268-1242/26/5/055021
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发表时间：
2011
影响因子：
1.9
通讯作者：
V. Shuman
中科院分区：
文献类型：
--
作者：
Y. Astrov;L. Portsel;A. Lodygin;V. Shuman
研究了不同硫蒸气压下硅的高温气相硫掺杂。结果表明，通过改变扩散蒸气压，可以定量地控制半导体中与硫有关的单原子和两原子深施主的含量。
The high-temperature gas-phase doping of silicon with sulfur has been studied at various sulfur vapor pressures. It is shown that the content of one- and two-atom sulfur-related deep donors in the semiconductor can be quantitatively controlled by varying the diffusant vapor pressure.