Top-Down Fabrication of Sub-30 nm Monocrystalline Silicon Nanowires Using Conventional Microfabrication
Top-Down Fabrication of Sub-30 nm Monocrystalline Silicon Nanowires Using Conventional Microfabrication
复制标题
DOI：
10.1021/nn901220g
复制
发表时间：
2009-11-01
期刊：
影响因子：
17.1
通讯作者：
van den Berg, Albert
中科院分区：
文献类型：
--
作者：
Chen, Songyue;Bomer, Johan G.;van den Berg, Albert
我们报告新的低成本的自上而下的硅纳米线制造技术，只需要传统的微加工工艺，包括微光刻，氧化，和湿各向异性平面依赖蚀刻，高品质的硅纳米线阵列可以很容易地在任何传统的微加工设施，没有纳米光刻或昂贵的设备。硅纳米线的横向尺寸范围从200纳米到10-20纳米，长度可达100微米，可以精确形成，具有近乎完美的单晶横截面、原子级光滑的表面，晶圆级成品率大于90%其中硅纳米线可以可控地缩放到任何尺寸和掺杂浓度从连续的晶体硅层的区域。
We report anew low-cost top-down silicon nanowire fabrication technology requiring only conventional microfabrication processes including microlithography, oxidation, and wet anisotropic plane-dependent etching; high quality silicon nanowire arrays can be easily made in any conventional microfabrication facility without nanolithography or expensive equipment. Silicon nanowires with scalable lateral dimensions ranging from 200 nm down to 10-20 nm and lengths up to similar to 100 mu m can be precisely formed with near-perfect monocrystalline cross sections, atomically smooth surfaces, and wafer-scale yields greater than 90% using a novel size reduction method where silicon nanowires can be controllably scaled to any dimension and doping concentration independent of large contacting regions from a continuous layer of crystalline silicon.