Growth and properties of CdZnTe films on different substrates
Growth and properties of CdZnTe films on different substrates
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不同基底上CdZnTe薄膜的生长及性能
DOI：
10.1016/j.surfcoat.2018.10.083
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发表时间：
2019-04-25
影响因子：
5.4
通讯作者：
Lu, Yicheng
中科院分区：
文献类型：
--
作者：
Huang, Jian;Gu, Qingmiao;Lu, Yicheng
采用近距离升华（CSS）方法在抛光的CdZnTe薄膜、Si晶片和氟掺杂氧化锡（FTO）玻璃上沉积高质量的CdZnTe薄膜。研究了不同基底对CdZnTe薄膜的生长速率、成分、结构和电性能的影响。结果表明，在抛光后的CdZnTe薄膜衬底上制备的CdZnTe薄膜具有更高的生长速率和更好的晶体质量。在抛光的 CdZnTe 薄膜基底上制备的薄膜还表现出较低的漏电流，这在高能粒子检测方面具有广阔的前景。
High quality CdZnTe films were deposited on polished CdZnTe film, Si wafer and fluorine doped tin oxide (FTO) glass by close spaced sublimation (CSS) method. The influences of different substrates on the growth rate, composition, structural and electrical properties of CdZnTe films were investigated. The results showed that the CdZnTe film prepared on the polished CdZnTe film substrate had a higher growth rate and a better crystalline quality. The film prepared on the polished CdZnTe film substrate also exhibited lower leakage current, which is promising for high energy particle detection.