Low damping in epitaxial sputtered iron films
Low damping in epitaxial sputtered iron films
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DOI：
10.1063/1.2216031
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发表时间：
2006-06-19
影响因子：
4
通讯作者：
Bailey, W. E.
中科院分区：
文献类型：
--
作者：
Scheck, C.;Cheng, L.;Bailey, W. E.
我们发现，溅射的纯外延铁薄膜的高频损耗与任何已知的金属铁磁异质结构一样低，甚至更低。最小34 GHz铁磁共振线宽为41 +/- 2 Oe，比先前报道的分子束外延沉积Fe的最小线宽低5%-10%。本征和外征阻尼在0-40 GHz范围内分离，给出了本征LL(G)弛豫率的下限，λ或G=85 +/- 5 MHz (α =0.0027 +/- 0.0001)，以及类似于30-50 MHz的外征eta。扫描频率测量表明，在30-40Ghz的集成频域器件具有Q bbb100的潜力。(c) 2006年美国物理研究所。
We show that sputtered, pure epitaxial iron films can have high-frequency loss as low as, or lower than, any known metallic ferromagnetic heterostructure. Minimum 34 GHz ferromagnetic resonance linewidths of 41 +/- 2 Oe are demonstrated, some similar to 5%-10% lower than the previous minimum reported for molecular beam epitaxially deposited Fe. Intrinsic and extrinsic damping have been separated over 0-40 GHz, giving a lower bound for intrinsic LL(G) relaxation rates of lambda or G=85 +/- 5 MHz (alpha=0.0027 +/- 0.0001) and for extrinsic eta similar to 30-50 MHz. Swept-frequency measurements indicate the potential for integrated frequency domain devices with Q > 100 at 30-40Ghz. (c) 2006 American Institute of Physics.