Junction properties of nitrogen‐doped ZnO thin films
Junction properties of nitrogen‐doped ZnO thin films
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DOI：
10.1002/pssc.200779171
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发表时间：
2008-07
期刊：
影响因子：
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通讯作者：
Jianguo Lu;S. Fujita;T. Kawaharamura;H. Nishinaka;Y. Kamada
中科院分区：
文献类型：
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作者：
Jianguo Lu;S. Fujita;T. Kawaharamura;H. Nishinaka;Y. Kamada
采用常压雾化学气相沉积方法在n-Si衬底上制备了由N掺杂p型和Al掺杂n型氧化锌组成的氧化锌基p-n同质结。In/Au金属沉积在p-ZnO层的顶部和n-Si衬底的底部形成欧姆接触。N-Si衬底可以作为良好的电极。室温下的电流-电压测量结果表明，氧化锌p-n异质结具有明显的整流行为，正向偏压下的开启电压约为3.8V，反向偏压下出现硬击穿。制备后的随时间变化的不稳定性归因于ZnO：N层p型导电性能的退化。(2018Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
ZnO-based p-n homojunctions, comprised of N-doped p-type ZnO and Al-doped n-type ZnO layers, were fabricated on n-Si substrates by atmospheric pressure mist chemical vapor deposition. In/Au metals were deposited on the top of the p-ZnO layer and on the bottom of the n-Si substrate to form Ohmic contacts. The n-Si substrate could serve as a good electrode. The current-voltage measurements at room temperature showed apparent rectifying behavior for the ZnO p-n homojunction, with a turn-on voltage of about 3.8 V under forward bias and a hard breakdown under reverse bias. The time-dependent instability after fabrication was attributed to the degradation of p-type conducting of the ZnO:N layer. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)