Direct writing for three-dimensional microfabrication using synchrotron radiation etching
Direct writing for three-dimensional microfabrication using synchrotron radiation etching
复制标题
利用同步辐射蚀刻直接写入三维微加工
DOI：
10.1109/memsys.2000.838578
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
S. Sugiyama
中科院分区：
文献类型：
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作者：
T. Katoh;N. Nishi;M. Fukagawa;H. Ueno;S. Sugiyama
本文介绍了用Tiega工艺直接写入聚四氟乙烯的快速三维微细加工技术。Tiega工艺是一种类似LIGA的工艺，用同步辐射(SR)直接光刻取代了硬X射线光刻。根据SR光的光通量不同，该工艺的刻蚀速率约为6-100个/SPLµ/m/分钟。一台X射线车床已改装成SR刻蚀车床，可加工出圆柱体、螺旋体、棱锥体、椭球体等非平面物体。覆盖有聚四氟乙烯薄片的金属线在通过面罩用SR照射时被旋转和/或移动。此外，通过将扫描平台与He气氛下的高自由度相结合，开发了无需使用任何掩模的直接写入，以创建任何微结构。这里描述了这些技术的能力和初步的制造结果。
This paper presents rapid three-dimensional microfabrication technologies for PTFE by direct writing with the TIEGA process, a LIGA-like process which replaces hard X-ray lithography with synchrotron radiation (SR) direct photo-etching. The etching rates of this process are of the order of 6-100 /spl mu/m/min, depending on the photon flux of the SR light. An X-ray lathe has been modified into an SR etching lathe to form cylindrical, helical, pyramidal, ellipsoidal, and other nonplanar objects. A metallic wire covered with a PTFE sheet is rotated and/or moved while being irradiated with SR through a mask. Moreover, direct writing without using any masks has been developed, by combining a scanning stage with a high degree of freedom under an He atmosphere, for creating any microstructure. The capabilities of these technologies and initial fabrication results are described here.