On the influence of the stacking sequence in the nucleation of Cu3Si: Experiment and the testing of nucleation models
On the influence of the stacking sequence in the nucleation of Cu3Si: Experiment and the testing of nucleation models
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DOI：
10.1016/j.actamat.2014.05.006
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发表时间：
2014-09
期刊：
影响因子：
9.4
通讯作者：
Mohammed Sirage Ibrahim;Z. Balogh;P. Stender;R. Schlesiger;G. Greiwe;G. Schmitz;B. Parditka;G. Langer;A. Csík;Z. Erdélyi
中科院分区：
文献类型：
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作者：
Mohammed Sirage Ibrahim;Z. Balogh;P. Stender;R. Schlesiger;G. Greiwe;G. Schmitz;B. Parditka;G. Langer;A. Csík;Z. Erdélyi
从曲面和平面两个方面研究了溅射沉积的Cu/Si/Cu三层膜上Cu3Si相的形核。两种实验方法，原子探针层析和二次中性质谱仪，独立地证实了硅上的铜界面比铜上的硅界面宽得多(原子探针测量结果为5.3 nm比2.4 nm)。结果表明，顶部界面的强化混合降低了硅化物相的成核势垒。对于尖锐的界面，存在成核势垒，而对于宽的界面，则没有成核势垒，这是用成核的多态模式再现的。经典形核理论或横向形核模式都不能解释这一行为。
The nucleation of the Cu3Si phase was studied on sputter-deposited Cu/Si/Cu trilayered specimens both in curved and planar geometry. Two experimental methods, atom probe tomography and secondary neutral mass spectrometry, independently confirmed that the Cu on Si interface is significantly broader than the Si on Cu (5.3 vs. 2.4 nm from the atom probe measurements). It is demonstrated that the enhanced mixing on the top interface leads to a reduced nucleation barrier for the silicide phase. The presence of a nucleation barrier for a sharp interface, but no barrier for a broad interface, is reproduced using the polymorphic mode of nucleation. Classical nucleation theory or the transverse nucleation mode failed to explain this behavior.