Formation process of β-FeSi2∕Si heterostructure in high-dose Fe ion implanted Si
Formation process of β-FeSi2∕Si heterostructure in high-dose Fe ion implanted Si
复制标题
高剂量Fe离子注入Si中β-FeSi2∕Si异质结构的形成过程
DOI：
10.1063/1.2201729
复制
发表时间：
2006
影响因子：
3.2
通讯作者：
K. Sickafus
中科院分区：
文献类型：
--
作者：
M. Ishimaru;K. Omae;I. Bae;M. Naito;Y. Hirotsu;J. Valdez;K. Sickafus
我们对单晶硅 (Si) 衬底进行了高剂量铁 (Fe) 离子注入，以合成 β-FeSi2∕Si 异质结构。 Si(001) 衬底在 623K 温度下注入 120keV Fe 离子至注量为 4×1017∕cm2，然后在 773 至 1073K 温度范围内进行热退火。通过 X 射线衍射 (XRD) 和透射电子显微镜 (TEM) 结合能量色散 X 射线光谱来检查注入引起的微观结构以及退火引起的微观结构。掠入射 XRD 和横截面 TEM 观察表明，在注入样品中形成了由 e-FeSi 和 β-FeSi2 组成的连续硅化铁层。随着退火温度的升高，e-FeSi相转变为β-FeSi2相，最终在Si衬底的最上层形成连续的β-FeSi2多晶层。极图 XRD 测量表明，β-FeSi2 微晶不是随机取向的，而是具有......
We have performed high-dose iron (Fe) ion implantation into a single crystalline silicon (Si) substrate in order to synthesize a β-FeSi2∕Si heterostructure. Si(001) substrates were implanted with 120keV Fe ions at 623K to a fluence of 4×1017∕cm2, followed by thermal annealing at temperatures ranging from 773to1073K. Implantation-induced microstructures as well as annealing-induced ones were examined by means of x-ray diffraction (XRD) and transmission electron microscopy (TEM) in combination with energy-dispersive x-ray spectroscopy. Grazing-incidence XRD and cross-sectional TEM observations indicated that a continuous iron silicide layer consisting of e-FeSi and β-FeSi2 is formed in as-implanted samples. With increasing annealing temperature the e-FeSi phase transformed into the β-FeSi2 one, and finally a continuous β-FeSi2 polycrystalline layer was formed on the topmost layer of the Si substrate. Pole figure XRD measurements revealed that the β-FeSi2 crystallites are not randomly oriented but possess a ...