Faradaic current detection during anodic oxidation of the H-passivated p-Si(001) surface with controlled relative humidity
Faradaic current detection during anodic oxidation of the H-passivated p-Si(001) surface with controlled relative humidity
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DOI：
10.1088/0957-4484/15/3/012
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发表时间：
2004-03-01
期刊：
影响因子：
3.5
通讯作者：
Yokoyama, H
中科院分区：
文献类型：
--
作者：
Kuramochi, H;Pérez-Murano, F;Yokoyama, H
使用具有湿度控制的原子力显微镜在40-70%的相对湿度范围内测量阳极氧化期间的法拉第电流。在H钝化的Si（001）上制造氧化物点期间检测到的电流水平在皮安（pA）水平。电流在施加高于阈值的氧化电压后立即开始（在几毫秒内），并根据氧化物生长随时间减小。由电流流动产生的总电荷通过积分电流-时间曲线来计算，并且发现与从制造的氧化物点的体积估计的预期电流很好地一致。氧化过程中的法拉第电流的实际监测证明在制造过程中的二维晶格。
Faradaic current during anodic oxidation is measured over a relative humidity range of 40-70% using an atomic force microscope with humidity control. The level of detected current during the fabrication of oxide dots on H-passivated Si(001) is in the picoampere (pA) level. Current flow began immediately (within a few milliseconds) after applying an oxidation voltage above a threshold value and decreased with time according to oxide growth. The total charge resulting from the current flow was calculated by integrating the current-time curve and was found to agree well with an estimation of expected current from the volume of the fabricated oxide dots. Actual monitoring of the oxidation process by the Faradaic current is demonstrated during the fabrication of a two-dimensional lattice.