ON THE UNIVERSALITY OF INVERSION LAYER MOBILITY IN SI MOSFETS .1. EFFECTS OF SUBSTRATE IMPURITY CONCENTRATION
ON THE UNIVERSALITY OF INVERSION LAYER MOBILITY IN SI MOSFETS .1. EFFECTS OF SUBSTRATE IMPURITY CONCENTRATION
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DOI：
10.1109/16.337449
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发表时间：
1994-12-01
影响因子：
3.1
通讯作者：
TANGO, H
中科院分区：
文献类型：
--
作者：
TAKAGI, S;TORIUMI, A;TANGO, H
本文报道了n沟道和p沟道Si MOSFET在衬底杂质浓度(10（15）至10（18)cm(-3)）范围内反转层迁移率的研究。探讨了反演层迁移率与有效法向场（E(eff)）之间普遍关系的有效性和局限性。我们发现，电子和空穴迁移率的普适性在10(18)cm（-3）范围内是成立的。普遍曲线的E（eff）依赖关系在电子和空穴之间是不同的，特别是在较低温度下，这意味着表面粗糙度散射对电子和空穴输运的影响是不同的。在杂质浓度较高的衬底上，由于衬底杂质的库仑散射，电子和空穴的迁移率明显偏离了表面载流子浓度较低时的通用曲线，并且在Fowler-Nordheim电子注入降解的MOSFET的迁移率中也观察到Si/SiO2界面带电中心引起的偏移。
This paper reports the studies of the inversion layer mobility in n- and p-channel Si MOSFET's with a wide range of substrate impurity concentrations (10(15) to 10(18) cm(-3)). The validity and limitations of the universal relationship between the inversion layer mobility and the effective normal field (E(eff)) are examined.It is found that the universality of both the electron and hole mobilities does hold up to 10(18) cm(-3). The E(eff) dependences of the universal curves are observed to differ between electrons and holes, particularly at lower temperatures, This result means a different influence of surface roughness scattering on the electron and hole transports.On substrates with higher impurity concentrations, the electron and hole mobilities significantly deviate from the universal curves at lower surface carrier concentrations because of Coulomb scattering by the substrate impurity, Also, the deviation caused by the charged centers at the Si/SiO2 interface is observed in the mobility of MOSFET's degraded by Fowler-Nordheim electron injection.