Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
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原子层沉积NbN薄膜的超导特性
DOI：
10.1109/tasc.2017.2655719
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发表时间：
2017
影响因子：
1.8
通讯作者：
Go Fujii
中科院分区：
文献类型：
--
作者：
Masahiro Ukibe;Go Fujii
为实现NbN/AlN/NbN超导隧道结阵列粒子探测器的高工作温度和高灵敏度，采用原子层沉积(ALD)技术，提出了一种高转变温度(TC)约17K的NbN薄膜制备工艺。NbN薄膜的源(前驱体)为(叔丁基亚胺)双(二乙氨基)Nb[C16H39N4Nb]。在M面蓝宝石晶片上沉积了NbN薄膜。在衬底温度约为570K的条件下制备了厚度为50 nm的NbN薄膜，其超导转变温度(TC)为12.35K。为了改善AlD法制备的NbN的超导性能，采用了沉积后快速热退火工艺。研究了薄膜的(TC)、表面形貌和结晶度随热退火温度的变化规律。
A fabrication process for NbN films with a high transition temperature (TC) of about 17 K was developed to realize NbN/AlN/NbN superconducting-tunnel-junction array particle detectors with a high operation temperature of >1 K and a high sensitivity by using atomic layer deposition (ALD). The source (precursor) of the NbN films was (tert -butylimido)bis(diethylamino)niobium [C16H39N4Nb]. NbN films were deposited on M-plane sapphire wafers. A 50-nm-thick NbN film was deposited with a substrate temperature of about 570 K and exhibited a (TC) of 12.35 K. To improve the superconducting properties of the NbN formed by ALD, a postdeposition rapid thermal annealing process was performed. The dependence of (TC), the surface morphology, and the crystallinity of the film on thermal annealing temperatures was evaluated.