MECHANISM FOR DOPING IN BI CHALCOGENIDE GLASSES
MECHANISM FOR DOPING IN BI CHALCOGENIDE GLASSES
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DOI：
10.1103/physrevlett.57.1316
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发表时间：
1986-09-15
影响因子：
8.6
通讯作者：
STEEL, AT
中科院分区：
文献类型：
--
作者：
ELLIOTT, SR;STEEL, AT
从扩展的X射线吸收精细结构数据中发现，锗硫系玻璃中Bi的结构环境由三重配位组成。当载流子类型从p变为n时，Debye-Waller因子增加2倍。涉及抑制带正电的结构缺陷的机制，以及随之而来的费米能级的取消钉扎，通过形成部分离子的Bi-硫族键，提出占掺杂效应。
The structural environment of Bi incorporated in Ge chalcogenide glasses has been found from extended x-ray absorption fine-structure data to consist of threefold coordination. An increase by a factor of 2 in the Debye-Waller factor occurs as the carrier type changes from p to n. A mechanism involving the suppression of positively charged structural defects, and the consequent unpinning of the Fermi level, by the formation of partially ionic Bi-chalcogen bonds is proposed to account for the doping effect.