Giant, Level-Dependent g Factors in InSb Nanowire Quantum Dots
Giant, Level-Dependent g Factors in InSb Nanowire Quantum Dots
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DOI：
10.1021/nl901333a
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发表时间：
2009-09-01
期刊：
影响因子：
10.8
通讯作者：
Xu, H. Q.
中科院分区：
文献类型：
--
作者：
Nilsson, Henrik A.;Caroff, Philippe;Xu, H. Q.
我们报道了InSb纳米线量子点的磁输运测量。测量结果表明，InSb量子点的量子能级具有巨大的g因子，其绝对值高达70，这是半导体量子点所报道的最大值。我们还观察到，这些g因子的值与量子水平有关，并且在不同的量子水平之间可能存在很大差异。巨g因子的存在表明，在被测的InSb纳米线量子点中，电子的轨道运动保留了相当大的贡献，而能级间的波动是由自旋轨道相互作用引起的。我们从固定电子数的InSb纳米线量子点基态和第一激发态之间避免的水平交叉中推导出自旋轨道相互作用强度的Delta(so) = 280 mu eV。
We report on magnetotransport measurements on InSb nanowire quantum dots. The measurements show that the quantum levels of the InSb quantum dots have giant g factors, with absolute values up to similar to 70, the largest value ever reported for semiconductor quantum dots. We also observe that the values of these g factors are quantum level dependent and can differ strongly between different quantum levels. The presence of giant g factors indicates that considerable contributions from the orbital motion of electrons are preserved in the measured InSb nanowire quantum dots, while the level-to-level fluctuations arise from spin-orbit interaction. We have deduced a value of Delta(so) = 280 mu eV for the strength of spin-orbit interaction from an avoided level crossing between the ground state and first excited state of an InSb nanowire quantum dot with a fixed number of electrons.