High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier
High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier
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DOI：
10.1063/1.5102080
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发表时间：
2019-08
影响因子：
4
通讯作者：
Yachao Zhang;Rui Guo;Shengrui Xu;Jincheng Zhang;Shenglei Zhao;Haiyong Wang;Q. Hu;Chunfu Zhang;Y. Hao
中科院分区：
文献类型：
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作者：
Yachao Zhang;Rui Guo;Shengrui Xu;Jincheng Zhang;Shenglei Zhao;Haiyong Wang;Q. Hu;Chunfu Zhang;Y. Hao
提出了一种具有GaN/InGaN复合沟道和超晶格背势垒的异质结构，并在其上实现了高性能高电子迁移率晶体管（HEMT）。 GaN/InGaN复合沟道中的载流子被很好地限制在“U型”势阱中，同时具有高迁移率、高密度和优越的限制性。结果，HEMT 的输出电流密度和线性度得到增强。此外，GaN/InGaN超晶格背势垒有效抑制了缓冲泄漏，从而显着提高了器件的击穿性能。这项工作的结果证明了具有GaN/InGaN复合沟道和超晶格背势垒的器件在下一代高功率和宽带电子应用中的巨大前景。提出了一种具有GaN/InGaN复合沟道和超晶格背势垒的异质结构，并在其上实现了高性能高电子迁移率晶体管（HEMT）。 GaN/InGaN复合沟道中的载流子被很好地限制在“U型”势阱中，同时具有高迁移率、高密度和优越的限制性。结果，HEMT 的输出电流密度和线性度得到增强。此外，GaN/InGaN超晶格背势垒有效抑制了缓冲泄漏，从而显着提高了器件的击穿性能。这项工作的结果证明了具有 GaN/InGaN 复合沟道和超晶格背势垒的器件对于下一代高功率和宽带电子应用的巨大前景。
A heterostructure with a GaN/InGaN composite channel and superlattice back barrier is proposed, and high-performance high electron mobility transistors (HEMTs) are achieved on it. The carriers in the GaN/InGaN composite channel are well confined in the “U-pattern” potential well, which simultaneously possess high mobility, high density, and superior confinement. As a result, the output current density and linearity of the HEMTs are enhanced. Moreover, the GaN/InGaN superlattice back barrier effectively suppresses the buffer leakage, resulting in the significant improvement in the breakdown performance of the devices. The results in this work demonstrate the great promise of the devices with the GaN/InGaN composite channel and superlattice back barrier for next generation high power and wideband electronic applications.A heterostructure with a GaN/InGaN composite channel and superlattice back barrier is proposed, and high-performance high electron mobility transistors (HEMTs) are achieved on it. The carriers in the GaN/InGaN composite channel are well confined in the “U-pattern” potential well, which simultaneously possess high mobility, high density, and superior confinement. As a result, the output current density and linearity of the HEMTs are enhanced. Moreover, the GaN/InGaN superlattice back barrier effectively suppresses the buffer leakage, resulting in the significant improvement in the breakdown performance of the devices. The results in this work demonstrate the great promise of the devices with the GaN/InGaN composite channel and superlattice back barrier for next generation high power and wideband electronic applications.