Vacancy Engineering in Nanostructured Semiconductors for Enhancing Photocatalysis
Vacancy Engineering in Nanostructured Semiconductors for Enhancing Photocatalysis
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纳米结构半导体中的空位工程增强光催化作用
DOI：
10.1039/d1ta03895h
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发表时间：
2021
影响因子：
11.9
通讯作者：
Mengye Wang
中科院分区：
文献类型：
--
作者：
Biao Wang;Jiawen Liu;Shan Yao;Fangyan Liu;Jiaqing He;Yuekun Liu;Zhang Lin;Feng Huang;Chuan Liu;Mengye Wang
半导体空位工程在过去的几十年里一直是一个突出的增长领域。调控电子结构和表面性质已经引起了人们对空位改性光催化剂的极大兴趣。鉴于空位介导的光致发光仅发展了相对较短的时间，在增强整个太阳光谱上的光吸收、电荷转移和分离的效率以及表面反应动力学方面已经取得了重大进展。本综述旨在强调最近在空缺增强型可持续发展方面取得的令人印象深刻的进展。首先，我们在定义空缺的分类之后，总结了空缺的制作和表征。第二，在几种光催化剂（即，金属氧化物、氢氧化物、硫化物、Sillén相相关的含铋材料和g-C3 N4），重点讨论了空位在调控光催化性能中的作用机理。最后，展望了光催化材料空位工程的发展前景和面临的挑战。
Semiconductor vacancy engineering has remained a prominent growing field over the past several decades. Modulating electronic structures and surface properties has sparked considerable interest in vacancy-modified photocatalysts. Given vacancy-mediated photocatalysis has only been developed for a relatively short period, significant advance has been made in enhancing light absorption over the full solar spectrum, the efficiency of charge transfer and separation and surface reaction kinetics. This review seeks to highlight the recent impressive progress in vacancy-enhanced photocatalysis. First, we summarize the crafting and characterization of vacancies after defining the classification of vacancies. Second, current developments of semiconductor vacancy engineering in several photocatalysts (i.e., metal oxides, hydroxides, sulfides, Sillén phase related bismuth-containing materials and g-C3N4) are emphasized, focusing on the mechanism of vacancies in regulating the photocatalytic performance. Finally, prospects and challenges regarding vacancy engineering of photocatalytic materials are concluded.