Thermal Analysis of Degradation in Ga2O3-In2O3-ZnO Thin-Film Transistors
Thermal Analysis of Degradation in Ga2O3-In2O3-ZnO Thin-Film Transistors
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DOI：
10.1143/jjap.47.6236
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发表时间：
2008-08-01
影响因子：
1.5
通讯作者：
Kwon, Jang Yeon
中科院分区：
文献类型：
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作者：
Fujii, Mami;Yano, Hiroshi;Kwon, Jang Yeon
Ga_2O_3-In_2O_3-ZnO(GIZO)薄膜晶体管(TFT)的退化是一种很有前途的新一代显示器驱动电路。对其进行了研究。我们发现了一种在硅TFT中没有观察到的退化模式。在栅压应力下观察到平移，传输曲线没有变化。从偏置电压的依赖关系来看，我们证实了该模式主要由垂直电场主导。测量了材料的温度分布，分析了降解机理。观察到漏电流引起的焦耳加热，但未发现漏偏对退化的显著加速作用。因此，我们得出结论，焦耳加热不会加速降解。观察到不依赖于应力电压的电学性质的恢复。
Degradation of Ga2O3-In2O3-ZnO (GIZO) thin-film transistors (TFTs), which are promising for driving circuits of next-generation displays. was studied. We found a degradation mode that was not observed in silicon TFTs. A parallel shift without any change of the transfer curve was observed under gate voltage stress. Judging from the bias voltage dependences we confirmed that the mode was mainly dominated by a vertical electric field. Thermal distribution was measured to analysis the degradation mechanism. Joule heating caused by drain current was observed; however, a marked acceleration of degradation by drain bias was not found. Therefore, we concluded that Joule heating did not accelerate degradation. Recovery of electrical properties independent of stress voltage were observed.