Fermi Level Pinning Induced by Doping in Air Stable n-Type Organic Semiconductor
Fermi Level Pinning Induced by Doping in Air Stable n-Type Organic Semiconductor
复制标题
空气稳定n型有机半导体中掺杂诱导的费米能级钉钉
DOI：
10.1021/acsaelm.9b00742
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发表时间：
2020-01
影响因子：
4
通讯作者：
Shikha Sharma;Samrat Ghosh;Tanweer Ahmed;Suman Ray;Saurav Islam;U. Salzner;A. Ghosh;S. Seki;S. Patil
中科院分区：
文献类型：
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作者：
Shikha Sharma;Samrat Ghosh;Tanweer Ahmed;Suman Ray;Saurav Islam;U. Salzner;A. Ghosh;S. Seki;S. Patil
有机半导体的掺杂可提高光电器件的性能。尽管 p 型掺杂已得到充分研究并成功应用于光电器件，但空气稳定 n 型掺杂...
Doping of organic semiconductors enhances the performance of optoelectronic devices. Although p-type doping is well studied and successfully deployed in optoelectronic devices, air stable n-type do...