GaN-on-Si: A scalable material system to realize cost effective next-generation solid state lighting and power devices
GaN-on-Si: A scalable material system to realize cost effective next-generation solid state lighting and power devices
复制标题
硅基氮化镓：可扩展的材料系统，可实现具有成本效益的下一代固态照明和功率器件
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
S. Biesemans
中科院分区：
文献类型：
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作者：
S. Decoutere;H. Osman;J. Dekoster;B. Dutta;S. Biesemans
在过去的十年里，属于III-V系统的氮化镓及其化合物半导体衍生物在发光二极管和大功率器件领域显示出了显着的性能优势。这是由于其固有的约3.4 eV的宽禁带，在蓝光和绿光下实现了高效的发光，以及出色的传输特性(1000-2000 cm2/vs的2度迁移率)，使高功率和高频率传输器件能够在高温和高击穿电压下运行，从而使一整套器件能够解决能效问题。
Over the last decade Gallium Nitride and its compound semiconductor derivatives that belong to the III–V system have demonstrated significant performance advantages in the area of light emitting diodes and high power devices. These have been enabled by their intrinsic wide band-gap of around 3.4eV which manifest itself as enabling efficient light emission in the blue and green, as well as excellent transport properties (2DEG mobility of 1000–2000cm2/Vs) enabling high power & frequency transport devices which can operate at high temperature with high breakdown voltages, enabling an entire set of devices to address power efficiency.