High-Electrical-Conductivity Multilayer Graphene Formed by Layer Exchange with Controlled Thickness and Interlayer
High-Electrical-Conductivity Multilayer Graphene Formed by Layer Exchange with Controlled Thickness and Interlayer
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DOI：
10.1038/s41598-019-40547-0
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发表时间：
2019-03-11
影响因子：
4.6
通讯作者：
Toko, Kaoru
中科院分区：
文献类型：
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作者：
Murata, Hiromasa;Nakajima, Yoshiki;Toko, Kaoru
层交换技术可以在任意衬底上制备高质量的多层石墨烯(MLG)，这是将先进电子器件与碳材料相结合的关键。我们在800℃下利用Ni诱导的层交换制备了不同厚度t的均匀MLG层，t从5 nm到200 nm不等。拉曼和透射电子显微镜研究表明，当在C和Ni层之间制备扩散控制的Al_2O_3中间层时，当t=50 nm时，MLG的晶体质量较低。霍尔效应测量表明，在t=50 nm处的载流子迁移率为550 cm(2)/vs，这是直接在绝缘体上形成的MLG中最高的霍尔迁移率。电导率(2700 S/厘米)也超过了在3000摄氏度或更高温度下合成的高度定向热解石墨。具有广泛厚度范围的MLG合成技术将使碳材料在器件中的广泛应用成为可能。
The layer exchange technique enables high-quality multilayer graphene (MLG) on arbitrary substrates, which is a key to combining advanced electronic devices with carbon materials. We synthesize uniform MLG layers of various thicknesses, t, ranging from 5 nm to 200 nm using Ni-induced layer exchange at 800 degrees C. Raman and transmission electron microscopy studies show the crystal quality of MLG is relatively low for t = 50 nm when we prepare a diffusion controlling Al2O3 interlayer between the C and Ni layers. Hall effect measurements reveal the carrier mobility for t = 50 nm is 550 cm(2)/Vs, which is the highest Hall mobility in MLG directly formed on an insulator. The electrical conductivity (2700 S/cm) also exceeds a highly oriented pyrolytic graphite synthesized at 3000 degrees C or higher. Synthesis technology of MLG with a wide range of thicknesses will enable exploration of extensive device applications of carbon materials.