Optimizing reactive ion etching to remove sub-surface polishing damage on diamond
Optimizing reactive ion etching to remove sub-surface polishing damage on diamond
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DOI：
10.1063/1.5094751
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发表时间：
2019-06-28
影响因子：
3.2
通讯作者：
Jackman, Richard B.
中科院分区：
文献类型：
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作者：
Hicks, Marie-Laure;Pakpour-Tabrizi, Alexander C.;Jackman, Richard B.
低缺陷光滑衬底是实现高质量金刚石外延生长和高性能器件的关键。优化的Ar/O2/CF 4反应离子刻蚀（RIE）等离子体处理的金刚石衬底光滑和有效性，以消除亚表面抛光损伤的特点。一个O2/CF 4 RIE工艺和不同的工艺参数（电感耦合等离子体，压板功率和压力）的影响进行了初步研究。然而，该过程仍然对表面粗糙度产生有害影响，在样品的表面上具有蚀刻坑。在6和10 μ m蚀刻后，向工艺中添加氩气实现了接近于零的表面凹坑密度和降低20%-44%的粗糙度。迭代的高分辨率X射线衍射测量提供了一种非破坏性的工具来检查抛光损伤去除的有效性，在这种情况下，从金刚石衬底的表面去除6 μ m的材料后，平滑处理减少。
Low defect smooth substrates are essential to achieve high quality diamond epitaxial growth and high performance devices. The optimization of the Ar/O2/CF4 reactive ion etching (RIE) plasma treatment for diamond substrate smoothing and its effectiveness to remove subsurface polishing damage are characterized. An O2/CF4 RIE process and the effect of different process parameters (inductively coupled plasma, platen power, and pressure) were initially examined. This process, however, still produced a detrimental effect to surface roughness, with etch pits across the surface of the sample. The addition of argon to the process achieved near-zero surface pit density and reduced roughness by 20%-44% after 6 and 10m etching. Iterative high-resolution X-ray diffraction measurements provided a nondestructive tool to examine the effectiveness of polishing damage removal and in this case reduced after removal of 6 mu m of material from the surface of the diamond substrate with the smoothing treatment.