The Possibility of Chemically Inert, Graphene-Based All-Carbon Electronic Devices with 0.8 eV Gap
The Possibility of Chemically Inert, Graphene-Based All-Carbon Electronic Devices with 0.8 eV Gap
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具有 0.8 eV 间隙的化学惰性石墨烯基全碳电子器件的可能性
DOI：
10.1021/nn102322s
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发表时间：
2011-05-01
期刊：
影响因子：
17.1
通讯作者：
Li, Ju
中科院分区：
文献类型：
--
作者：
Qi, Jing Shan;Huang, Jian Yu;Li, Ju
石墨烯是一种有趣的电子材料。然而，平坦的单层石墨烯在电子态密度中不具有显著的间隙，这是逻辑应用中大的开关比所需的。我们在这里提出了一种新的器件架构，由自折叠的碳纳米管石墨烯混合物，这是最近在焦耳加热的石墨烯实验观察。这些实验证明了原位切割、折叠和焊接少层石墨烯以形成具有复杂拓扑结构的全碳纳米结构的可行性。自折叠纳米管的电子能隙可以与石墨烯电极的半金属性相结合，形成“金属-半导体金属”结。通过从头计算，我们证明了这种结的透射光谱中的大的能隙，这保留了半导体纳米管的固有的输运特性，尽管在平坦的石墨烯弯曲的纳米管界面的拓扑必要的disinclination。这些全碳器件被提议通过接触探针切割和高温退火来构造，并且如果生产的话，在正常气体环境下在室温下将是化学稳定的。
Graphene is an Interesting electronic material. However, flat monolayer graphene does not have significant gap in the electronic density of states, required for a large on off ratio in logic applications. We propose here a novel device architecture, composed of self-folded carbon nanotube graphene hybrids, which have been recently observed experimentally in Joule-heated graphene. These experiments demonstrated the feasibility of cutting, folding, and welding few-layer graphene in situ to form all-carbon nanostructures with complex topologies. The electronic gap of self-folded nanotubes can be combined with the semimetallicity of graphene electrodes to form a "metal-semiconductor metal" junction. By ab initio calculations we demonstrate large energy gaps in the transmission spectra of such junctions, which preserve the intrinsic transport characteristics of the semiconducting nanotubes despite topologically necessary disinclinations at the flat graphene curved nanotube interface. These all-carbon devices are proposed to be constructed by contact probe cutting and high-temperature annealing and, If produced, would be chemically stable at room temperature under normal gas environments.