X-ray photoelectron spectroscopy study of cubic boron nitride single crystals grown under high pressure and high temperature
X-ray photoelectron spectroscopy study of cubic boron nitride single crystals grown under high pressure and high temperature
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高压高温生长立方氮化硼单晶的X射线光电子能谱研究
DOI：
10.1016/j.apsusc.2011.12.032
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发表时间：
2012-02-01
影响因子：
6.7
通讯作者：
Jia, Gang
中科院分区：
文献类型：
--
作者：
Hou, Lixin;Chen, Zhanguo;Jia, Gang
用X射线光电子能谱(XPS)研究了非故意掺杂立方氮化硼(CBN)单晶中的缺陷、杂质及其成键状态。结果表明，氮空位(V-N)是CBN晶体的主要本征缺陷，因为在Ar离子溅射前，B：N的原子比总是大于1。经过溅射清洗后，样品中约6at%的碳作为主要杂质残留在样品中，可能来自生长室。C_1S、B_1S和N_1S的XPS谱证实了碳可以取代氮晶格形成C-B-N或C-B的成键状态。C杂质(受主)和N空位(施主)可以组成施主-受主复合体，从而影响CBN晶体的电学和光学性质。(C)2011爱思唯尔B.V.保留所有权利。
The defects, impurities and their bonding states of unintentionally doped cubic boron nitride (cBN) single crystals were investigated by X-ray photoelectron spectroscopy (XPS). The results indicate that nitrogen vacancy (V-N) is the main native defect of the cBN crystals since the atomic ratio of B:N is always larger than 1 before Ar ion sputtering. After sputter cleaning, around 6 at% carbon, which probably comes from the growth chamber, remains in the samples as the main impurity. Carbon can substitute nitrogen lattice site and form the bonding states of C-B-N or C-B, which can be verified by the XPS spectra of C1s, B1s and N1s. The C impurity (acceptor) and N vacancy (donor) can compose the donor-acceptor complex to affect the electrical and optical properties of cBN crystals. (C) 2011 Elsevier B. V. All rights reserved.