Wide-Range Epitaxial Strain Control of Electrical and Magnetic Properties in High-Quality SrRuO3 Films
Wide-Range Epitaxial Strain Control of Electrical and Magnetic Properties in High-Quality SrRuO3 Films
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DOI：
10.1021/acsaelm.1c00288
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发表时间：
2021-01
影响因子：
4.7
通讯作者：
Y. Wakabayashi;Shingo Kaneta-Takada;Y. Krockenberger;Y. Taniyasu;Hideki Yamamoto
中科院分区：
文献类型：
--
作者：
Y. Wakabayashi;Shingo Kaneta-Takada;Y. Krockenberger;Y. Taniyasu;Hideki Yamamoto
四维铁磁体SrRuO3薄膜的外延应变通过晶格、电子和自旋之间的强耦合与物理性质直接相关。它提供了一个很好的机会来调整SrRuO3在电子和自旋电子器件中的功能。然而，由于缺乏系统的研究，对SrRuO3外延应变效应的深入了解仍然是难以实现的。本研究展示了高质量SrRuO3薄膜的电学和磁性能的大范围外延应变控制。外延应变是由晶格失配为-1.6到2.3的立方或赝赝钙钛矿衬底施加的% with reference to bulk SrRuO3. The Poisson ratio, which describes the two orthogonal distortions due to the substrate clamping effect, is estimated to be 0.33. The Curie temperature (TC) and residual resistivity ratios of the series of films are higher than or comparable to the highest reported values for SrRuO3 on each substrate, confirming the high crystalline quality of the films. A TC of 169 K is achieved in a tensile-strained SrRuO3 film on the DyScO3 (110) substrate, which is the highest value ever reported for SrRuO3. The TC (146-169 K), magnetic anisotropy (perpendicular or in-plane magnetic easy axis), and metallic conduction (residual resistivity at 2 K of 2.10 - 373 {\mu}{\Omega}cm) of SrRuO3 are widely controlled by epitaxial strain. These results provide guidelines to design SrRuO3-based heterostructures for device applications.
Epitaxial strain in 4d ferromagnet SrRuO3 films is directly linked to the physical properties through the strong coupling between lattices, electrons, and spins. It provides an excellent opportunity to tune the functionalities of SrRuO3 in electronic and spintronic devices. However, a thorough understanding of the epitaxial strain effect in SrRuO3 has remained elusive due to the lack of systematic studies. This study demonstrates wide-range epitaxial strain control of electrical and magnetic properties in high-quality SrRuO3 films. The epitaxial strain was imposed by cubic or pseudocubic perovskite substrates having a lattice mismatch of -1.6 to 2.3% with reference to bulk SrRuO3. The Poisson ratio, which describes the two orthogonal distortions due to the substrate clamping effect, is estimated to be 0.33. The Curie temperature (TC) and residual resistivity ratios of the series of films are higher than or comparable to the highest reported values for SrRuO3 on each substrate, confirming the high crystalline quality of the films. A TC of 169 K is achieved in a tensile-strained SrRuO3 film on the DyScO3 (110) substrate, which is the highest value ever reported for SrRuO3. The TC (146-169 K), magnetic anisotropy (perpendicular or in-plane magnetic easy axis), and metallic conduction (residual resistivity at 2 K of 2.10 - 373 {\mu}{\Omega}cm) of SrRuO3 are widely controlled by epitaxial strain. These results provide guidelines to design SrRuO3-based heterostructures for device applications.