Effect of La Addition on the Electrical Characteristics and Stability of Solution-Processed LaInO Thin-Film Transistors With High-k ZrO2 Gate Insulator
Effect of La Addition on the Electrical Characteristics and Stability of Solution-Processed LaInO Thin-Film Transistors With High-k ZrO2 Gate Insulator
复制标题
添加 La 对高 k ZrO2 栅极绝缘体固溶处理 LaInO 薄膜晶体管电特性和稳定性的影响
DOI：
10.1109/ted.2017.2781725
复制
发表时间：
2018-02-01
影响因子：
3.1
通讯作者：
Zhang, Zhi-Lin
中科院分区：
文献类型：
--
作者：
Zhao, Cheng-Yu;Li, Jun;Zhang, Zhi-Lin
本文采用溶液法制备的ZrO_2薄膜作为不同La掺杂量的氧化镧铟薄膜晶体管（LaInO）的绝缘层。详细研究了La掺杂对LaInO薄膜晶体管的电学性能以及在偏压应力和温度应力下的稳定性的影响。随着La掺杂量的增加，饱和迁移率μ从48.8下降到32.7 cm（2）。当La掺杂浓度为10mol%时，薄膜的亚阈值电压摆幅为0.12V/dec，同时薄膜的稳定性也得到了明显的改善。这是由于La-O的成键强度比In-O的强，导致陷阱态的减少。X射线光电子能谱分析表明，La的加入可以有效地抑制氧空位的产生。态密度的计算和电容-电压的测量也进一步证实了La的加入降低了陷阱态密度，从而使LaInO TFT的稳定性得到了明显的改善。
In this paper, solution-processed ZrO2 thin films are used to be as insulting layers for lanthanum indium oxide (LaInO) thin-film transistors (TFTs) with different La doping contents. The influence of La addition on the electrical properties and stability under bias stress and temperatures stress for LaInO TFTs is investigated in detail. With the improvement of La doping contents, the saturation mobility (mu) decreases from 48.8 to 32.7 cm(2) . V(-1)s(-1) and the threshold voltage (V-T) increases from 1.12 to 1.76 V. When La doping concentration is 10 mol%, LaInO TFT has a small subthreshold swing of 0.12 V/dec. Meanwhile, the stability is improved obviously. It is attributed to the strong bonding strength of La-O relative to that of In-O, resulting in the reduction of trap states. X-ray photoelectron spectroscopy shows that the generation of oxygen vacancies can effectively be suppressed by La addition. The calculation of density of states and the measurement of the capacitance-voltage can also further confirm that the density of trap states is decreased by La addition, and thus the stability of LaInO TFTs can get an obvious improvement.