Observation of conductivity type conversion in undoped ZnO films grown by pulsed laser deposition on silicon (100) substrates
Observation of conductivity type conversion in undoped ZnO films grown by pulsed laser deposition on silicon (100) substrates
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DOI：
10.1063/1.3682080
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发表时间：
2012-02
影响因子：
4
通讯作者：
S. Esmaili-Sardari;A. Berkovich;A. Iliadis
中科院分区：
文献类型：
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作者：
S. Esmaili-Sardari;A. Berkovich;A. Iliadis
本文报道了用脉冲激光沉积法在硅（100）衬底上生长的ZnO薄膜在低恒氧压下由n型向p型的转变。电导率转换归因于施主和受主类原生缺陷之间的竞争与生长条件和磷掺杂的n型和硼掺杂的p-Si衬底之间的表面差异。讨论了生长温度对氧空位、锌空位和氢杂质污染等本征缺陷的影响。我们的研究结果表明，与缺陷相关的中心的相互作用是至关重要的电行为和导电类型生长在Si衬底上的ZnO。
We report a conductivity type conversion of ZnO films from n to p-type for films grown on silicon (100) substrates by pulsed laser deposition under low constant oxygen overpressure. Conductivity conversion is attributed to a competition between donor and acceptor-like native defects correlating with growth conditions and surface differences between phosphorus doped n-type and boron doped p-Si substrates. Effects of growth temperature on intrinsic defects including oxygen vacancies, zinc vacancies and hydrogen impurity contamination are discussed. Our results show that the interplay of defect-related centers is critical to the electrical behavior and conductivity type of ZnO grown on Si substrates.