Measurement of the shot noise in a single electron transistor
Measurement of the shot noise in a single electron transistor
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DOI：
10.1103/physrevb.80.155320
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发表时间：
2008-12
影响因子：
3.7
通讯作者：
S. Kafanov;P. Delsing
中科院分区：
文献类型：
--
作者：
S. Kafanov;P. Delsing
我们系统地测量了单电子晶体管（SET）中的散粒噪声与偏置电压和栅电压的关系。通过在谐振电路中嵌入SET，我们已经能够在谐振频率464 MHz处测量其散粒噪声，其中1/f噪声可以忽略不计。我们可以提取Fano因子，其取决于SET中的库仑阻塞的量而在0.5和1之间变化，与理论非常一致。
We have systematically measured the shot noise in a single-electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency 464 MHz, where the 1/f noise is negligible. We can extract the Fano factor which varies between 0.5 and 1 depending on the amount of Coulomb blockade in the SET, in very good agreement with the theory.