Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes
Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes
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DOI：
10.1063/1.4944892
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发表时间：
2016-03-28
影响因子：
3.2
通讯作者：
Barnett, A. M.
中科院分区：
文献类型：
--
作者：
Lioliou, G.;Meng, X.;Barnett, A. M.
作为开发适用于恶劣环境的光子计数X射线光谱系统的一部分，报道了两个GaAsp(+)-i-n(+)台面X射线光电二极管在0℃到120℃的温度范围内的电特性，以及其中一个二极管作为X射线探测器的温度范围在0℃到60℃的特性。随机选择的二极管是完全刻蚀的，并且没有钝化。二极管直径为200微米，I层厚度为7微米。对于d1，漏电流密度从0℃时的(361)nA/cm(-2)增加到120℃时的(24.36+/-0.05)mA/cm(-2)；对于D2，漏电流密度从0℃时小于不确定度(0.2+/-1.2)nA/cm(-2)的电流密度增加到D2在120℃时的(9.39+/-0.02)mA/cm(-2)。在每个温度下，在5V反向偏置下获得了最佳的能量分辨率(半高宽为5.9keV)；在0℃下为730 eV，在20℃下为750 eV，在40℃下为770 eV，在60℃下为840 eV。发现只有当探测器在60℃，5V，10V和15V反向偏置和长整形时间(&gT；5µS)时，平行白噪声是光峰展宽的主要来源，而对于所有其他光谱，介电噪声和电荷捕获噪声的总和是主要的噪声源。(C)2016 AIP出版有限责任公司。
Electrical characterization of two GaAs p(+)-i-n(+) mesa X-ray photodiodes over the temperature range 0 degrees C to 120 degrees C together with characterization of one of the diodes as an X-ray detector over the temperature range 0 degrees C to 60 degrees C is reported as part of the development of photon counting X-ray spectroscopic systems for harsh environments. The randomly selected diodes were fully etched and unpassivated. The diodes were 200 mu m in diameter and had 7 mu m thick i layers. The leakage current density was found to increase from (361) nA/cm(-2) at 0 degrees C to (24.36+/-0.05) mu A/cm(-2) at 120 degrees C for D1 and from a current density smaller than the uncertainty (0.2+/-1.2) nA/cm(-2) at 0 degrees C to (9.39+/-0.02) mu A/cm(-2) at 120 degrees C for D2 at the maximum investigated reverse bias (15 V). The best energy resolution (FWHM at 5.9 keV) was achieved at 5V reverse bias, at each temperature; 730 eV at 0 degrees C, 750 eV at 20 degrees C, 770 eV at 40 degrees C, and 840 eV at 60 degrees C. It was found that the parallel white noise was the main source of the photopeak broadening only when the detector operated at 60 degrees C, at 5V, 10V, and 15V reverse bias and at long shaping times (>5 mu s), whereas the sum of the dielectric noise and charge trapping noise was the dominant source of noise for all the other spectra. (C) 2016 AIP Publishing LLC.